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Proceedings Paper

Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes
Author(s): J. Müller; G. Brüderl; M. Schillgalies; A. Breidenassel; S. Tautz; D. Dini; T. Lermer; S. Lutgen; U. Strauß
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Paper Abstract

We present analytical methods to study the physical mechanisms of the optical output stability of blue InGaN laser diodes in short and long-term stress experiments. Lasers of three ridge widths were stressed under constant current condition at a constant current density. The output power of a 1.8μm ridge laser decreased down to 40% within 15h mainly due to an increase in threshold current. Broader ridges showed a more stable output power. The decline in output power was related to changes in quantum efficiency and longer carrier lifetimes after stress. A simple recombination model was fitted to the measurements indicating no increase in non-radiative recombination centers. Instead the longer carrier lifetimes could be well explained with a decrease in carrier density due to an additional current spreading. These results were confirmed by changes in the sub-threshold wavelength shift before and after aging.

Paper Details

Date Published: 10 March 2010
PDF: 7 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760222 (10 March 2010); doi: 10.1117/12.842130
Show Author Affiliations
J. Müller, OSRAM Opto Semiconductors GmbH (Germany)
G. Brüderl, OSRAM Opto Semiconductors GmbH (Germany)
M. Schillgalies, OSRAM Opto Semiconductors GmbH (Germany)
A. Breidenassel, OSRAM Opto Semiconductors GmbH (Germany)
S. Tautz, OSRAM Opto Semiconductors GmbH (Germany)
D. Dini, OSRAM Opto Semiconductors GmbH (Germany)
T. Lermer, OSRAM Opto Semiconductors GmbH (Germany)
S. Lutgen, OSRAM Opto Semiconductors GmbH (Germany)
U. Strauß, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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