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Proceedings Paper

Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing
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Paper Abstract

Integrated optical semiconductor sensors are a promising technology for both lab-on-a-chip and molecular imaging applications due to their low cost, small size, high sensitivity, and flexible designs. We present the design and fabrication of a GaAs-based monolithically integrated fluorescence sensor incorporating 670nm VCSELs and PIN photodetectors. This is the first integrated, VCSEL-based fluorescence sensor with excitation at a far-red wavelength and is specifically designed for in vivo sensing applications. In addition, we discuss considerations to simultaneously achieve high power VCSELs and low dark current PIN photodetectors required for sensitive fluorescence detection. These fabricated sensors incorporate 670nm VCSELs emitting 2.0mW at room temperature (RT) with adjacent detectors exhibiting RT dark less than 2pA/mm2 (100mV reverse bias). Fluorescence emission filters suitable for transmitting Cy5.5 fluorescent dye emission were integrated with the photodetectors. The sensor detects Cy5.5 molecules in vitro at 5nM concentration with linear response for concentrations up to 25μM. These miniature sensors are suitable for portable diagnostic assays and in vivo rodent studies.

Paper Details

Date Published: 5 February 2010
PDF: 7 pages
Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150D (5 February 2010); doi: 10.1117/12.842096
Show Author Affiliations
Thomas D. O'Sullivan, Stanford Univ. (United States)
Elizabeth Munro, Univ. of Toronto (Canada)
James S. Harris, Stanford Univ. (United States)
Ofer Levi, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 7615:
Vertical-Cavity Surface-Emitting Lasers XIV
James K. Guenter; Kent D. Choquette, Editor(s)

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