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Proceedings Paper

Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Author(s): T. Passow; R. Gutt; M. Maier; W. Pletschen; M. Kunzer; R. Schmidt; J. Wiegert; D. Luick; S. Liu; K. Köhler; J. Wagner
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Paper Abstract

Reflective (thick) and semi-transparent (thin) Ni/Ag/Ni contacts were prepared on GaInN-based light-emitting diodes (LEDs) and p-GaN/p-Al0.15Ga0.85N layer sequences. A light output power enhancement of 41% and forward voltage reduction of 0.59 V were obtained compared to a Ni/Au contact for LEDs emitting at 400 nm with thick p-GaN contact layers. The specific contact resistance of the Ni/Ag/Ni contacts on p-GaN/p-Al0.15Ga0.85N with varying p-GaN thickness (5-20 nm) were determined by transmission line method and compared to Ni/Au contacts. Low resistive ohmic contacts were obtained for a p-GaN thickness of less than 10 nm. The p-GaN layer can be completely omitted for the reflective Ni/Ag/Ni contact. In addition, reflection and transmission of the Ni/Ag/Ni metallization schemes were investigated in the ultra-violet spectral range. Thick Ni/Ag/Ni and thin Ni/Ag/Ni covered by Al are promising to serve as reflective contacts for ultra-violet LEDs. The former for wavelength around 350 nm and the latter for wavelengths below 350 nm.

Paper Details

Date Published: 12 February 2010
PDF: 7 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171I (12 February 2010); doi: 10.1117/12.841968
Show Author Affiliations
T. Passow, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
R. Gutt, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
M. Maier, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
W. Pletschen, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
M. Kunzer, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
R. Schmidt, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
J. Wiegert, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
D. Luick, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
S. Liu, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
K. Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
J. Wagner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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