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Proceedings Paper

Recent advancements in technology of compact laser plasma EUV sources
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Paper Abstract

The recent advancements in technology of compact laser plasma EUV sources based on a gas puff target are presented in the paper. The sources have been developed for application in processing materials using EUV radiation in the wavelength range from about 5 nm to about 50 nm that is efficiently produced in result of irradiation a double-stream gas puff target with high-intensity laser pulses from a Nd:YAG laser (0.8 J/4 ns/10 Hz). The sources can be equipped with two various grazing incidence optical systems to focus EUV radiation: an axisymmetrical ellipsoidal mirror or a multifoil mirror system of the "lobster eye" type. A new design of the laser plasma EUV source dedicated for micro- and nanoprocessing polymers and modification of polymer surfaces is presented for the first time.

Paper Details

Date Published: 17 February 2010
PDF: 8 pages
Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840U (17 February 2010); doi: 10.1117/12.841715
Show Author Affiliations
Henryk Fiedorowicz, Military Univ. of Technology (Poland)
Andrzej Bartnik, Military Univ. of Technology (Poland)
Roman Jarocki, Military Univ. of Technology (Poland)
Jerzy Kostecki, Military Univ. of Technology (Poland)
Ladislav Pina, Czech Technical Univ. in Prague (Czech Republic)
Mirosław Szczurek, Military Univ. of Technology (Poland)
Przemysław Wachulak, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 7584:
Laser Applications in Microelectronic and Optoelectronic Manufacturing XV
Hiroyuki Niino; Michel Meunier; Bo Gu; Guido Hennig; Jan J. Dubowski, Editor(s)

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