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Proceedings Paper

Optical properties in InGaAs quantum dots on SiO2-patterned vicinal (001) GaAs substrate
Author(s): Hyo Jin Kim; Sou Young Yoo; Hang Ju Ko; Myung Soo Han; Doo Gun Kim; Swook Han; Seon Hoon Kim; Hyun Chul Ki
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Paper Abstract

We studied the energy states in In0.8Ga0.2As SAQDs (self-assembled quantum dots) which depended on W(001) and the misorientation angle of the substrate. Starting materials used in this study were SiO2-patterend exact and 5 degree - off (001) GaAs substrates. In0.8Ga0.2As SAQDs had only ground state emissions for SiO2-patterned exact (001) GaAs substrate, whereas those had ground and excited state emissions for SiO2-patterned 5 degree-off (001) GaAs substrate. These results suggest that discrete nature of the density of states in SAQDs was improved by using SiO2-patterned vicinal (001) GaAs substrate with higher misorientation angle of substrate.

Paper Details

Date Published: 24 February 2010
PDF: 8 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 761012 (24 February 2010); doi: 10.1117/12.841706
Show Author Affiliations
Hyo Jin Kim, Korea Photonics Technology Institute (Korea, Republic of)
Sou Young Yoo, Korea Photonics Technology Institute (Korea, Republic of)
Hang Ju Ko, Korea Photonics Technology Institute (Korea, Republic of)
Myung Soo Han, Korea Photonics Technology Institute (Korea, Republic of)
Doo Gun Kim, Korea Photonics Technology Institute (Korea, Republic of)
Swook Han, Korea Photonics Technology Institute (Korea, Republic of)
Seon Hoon Kim, Korea Photonics Technology Institute (Korea, Republic of)
Hyun Chul Ki, Korea Photonics Technology Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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