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Proceedings Paper

InGaAsSb LED arrays (lambda = 3.7 µm) with photonic crystals
Author(s): B. A. Matveev; Yu. M. Zadiranov; A. L. Zakgeim; N. D. Il'inskaya; S. A. Karandashev; M. A. Remennyy; N. M. Stus'; A. A. Usikova; A. E. Cherniakov
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Paper Abstract

We present L-I, I-V and spectral characteristics at 300 and 77 K of the flip-chip LED arrays based on p-InAsSbP/n- InGaAsSb heterostrucutres with photonic crystal formed onto an outcoupling n+-InAs substrate. We also describe results on IR imaging (2D radiation mapping) and near and far field patterns in forward biased LEDs.

Paper Details

Date Published: 23 February 2010
PDF: 5 pages
Proc. SPIE 7609, Photonic and Phononic Crystal Materials and Devices X, 76090I (23 February 2010); doi: 10.1117/12.841689
Show Author Affiliations
B. A. Matveev, Ioffe Physico-Technical Institute (Russian Federation)
Yu. M. Zadiranov, Ioffe Physico-Technical Institute (Russian Federation)
A. L. Zakgeim, Microelectronics Ctr. for Research & Engineering of Submicron Heterostructures (Russian Federation)
N. D. Il'inskaya, Ioffe Physico-Technical Institute (Russian Federation)
S. A. Karandashev, Ioffe Physico-Technical Institute (Russian Federation)
M. A. Remennyy, Ioffe Physico-Technical Institute (Russian Federation)
N. M. Stus', Ioffe Physico-Technical Institute (Russian Federation)
A. A. Usikova, Ioffe Physico-Technical Institute (Russian Federation)
A. E. Cherniakov, Microelectronics Ctr. for Research & Engineering of Submicron Heterostructures (Russian Federation)


Published in SPIE Proceedings Vol. 7609:
Photonic and Phononic Crystal Materials and Devices X
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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