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Proceedings Paper

Structural and optical properties of TiO2 thin films annealed in O2 and N2 gases flow
Author(s): Seon Hoon Kim; Tae Un Kim; Doo Gun Kim; Hyun Chul Ki; Geum-Yoon Oh; Hyo Jin Kim; Hang Ju Ko; Myung-Soo Han; Swook Hann; Hwe Jong Kim
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Paper Abstract

Titanium dioxide (TiO2) thin films were prepared by ion-assisted electron-beam deposition on glass at room temperature and were annealed by rapid thermal annealing in O2 and N2 gas flow. TiO2 thin films annealed in N2 gas flow are (110) rutile phase and (101) anatase phase, but in O2 gas flow are (110) rutile phase. The optical band gaps of the TiO2 thin films are increased to 3.281 eV with annealing treatment of 300 ~ 500 °C in O2 gas flow and to 3.271 eV in N2 gas flow. However, the band gap begins to decrease to 3.277 eV at the annealing temperature of 600 °C in O2 gas flow and to 3.257 eV in N2 gas flow, respectively.

Paper Details

Date Published: 15 February 2010
PDF: 8 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 76031U (15 February 2010); doi: 10.1117/12.841681
Show Author Affiliations
Seon Hoon Kim, Korea Photonics Technology Institute (Korea, Republic of)
Tae Un Kim, Korea Photonics Technology Institute (Korea, Republic of)
Doo Gun Kim, Korea Photonics Technology Institute (Korea, Republic of)
Hyun Chul Ki, Korea Photonics Technology Institute (Korea, Republic of)
Geum-Yoon Oh, Chung-Ang Univ. (Korea, Republic of)
Hyo Jin Kim, Korea Photonics Technology Institute (Korea, Republic of)
Hang Ju Ko, Korea Photonics Technology Institute (Korea, Republic of)
Myung-Soo Han, Korea Photonics Technology Institute (Korea, Republic of)
Swook Hann, Korea Photonics Technology Institute (Korea, Republic of)
Hwe Jong Kim, Korea Photonics Technology Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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