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Proceedings Paper

Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching
Author(s): Shui-Jinn Wang; Wei-Chi Lee; Kai-Ming Uang; Tron-Min Chen; Der-Ming Kuo; Pei-Ren Wang; Po-Hong Wang
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Paper Abstract

Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm2), the rate of electron-hole pair recombination at sites with dislocation defects is greater than for crystalline GaN, favoring for the formation of GaOx, and in turn, resulting in a relatively lower etching rate therein and leading to a roughened surface with volcano-like protrusions. Typical diameter/height and density of protrusions are around 2~4 μm/2 μm and 106 cm-2. Through the use of KrF laser and KOH etching, an enhancement in the root-meansquare surface roughness by 250 times and an improvement in Lop by 25% at 750 mA were obtained. It is expected that the surface roughness of Gallium Nitride by KrF excimer laser technology would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future.

Paper Details

Date Published: 11 February 2010
PDF: 9 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76170P (11 February 2010); doi: 10.1117/12.841636
Show Author Affiliations
Shui-Jinn Wang, National Cheng Kung Univ. (Taiwan)
Wei-Chi Lee, National Cheng Kung Univ. (Taiwan)
Kai-Ming Uang, WuFeng Institute of Technology (Taiwan)
Tron-Min Chen, WuFeng Institute of Technology (Taiwan)
Der-Ming Kuo, National Cheng Kung Univ. (Taiwan)
Pei-Ren Wang, National Cheng Kung Univ. (Taiwan)
Po-Hong Wang, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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