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Proceedings Paper

Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
Author(s): B. A. Matveev; A. V. Ankudinov; N. V. Zotova; S. A. Karandashev; T. V. L'vova; M. A. Remennyy; A. Yu. Rybal'chenko; N. M. Stus'
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Paper Abstract

IR imaging (2D radiation mapping) of forward biased point contact LEDs based on p-InAsSbP/n-InAs/n-InAsSbP DHs and p-InAsSbP/n-InAs SHs revealed differences in current crowding effect that was attributed to the properties of isotype n-InAsSbP/n-InAs barrier. 2D radiation distribution has been used for determination of L-I and I-V characteristics that are not distorted by the current crowding. The existence of the n-InAsSbP/n-InAs barrier was also traced in AFM and C-V measurements.

Paper Details

Date Published: 26 February 2010
PDF: 9 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970G (26 February 2010); doi: 10.1117/12.841625
Show Author Affiliations
B. A. Matveev, Ioffe Physico-Technical Institute (Russian Federation)
A. V. Ankudinov, Ioffe Physico-Technical Institute (Russian Federation)
N. V. Zotova, Ioffe Physico-Technical Institute (Russian Federation)
S. A. Karandashev, Ioffe Physico-Technical Institute (Russian Federation)
T. V. L'vova, Ioffe Physico-Technical Institute (Russian Federation)
M. A. Remennyy, Ioffe Physico-Technical Institute (Russian Federation)
A. Yu. Rybal'chenko, Ioffe Physico-Technical Institute (Russian Federation)
N. M. Stus', Ioffe Physico-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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