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Proceedings Paper

A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP
Author(s): Kristian M. Groom; Benjamin J. Stevens; Punima D. L. Greenwood; David T. D. Childs; John S. Roberts; Matthew Lomas; Maxime Hugues; Hifsa Shahid; Richard Hogg
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Paper Abstract

We demonstrate how GaAs/AlGaAs regrowth upon patterned InGaP can be utilised to realise self-aligned lasers, window structured superluminescent diodes and distributed feedback lasers. Such realisation demonstrates the promise of this methodology for GaAs-based opto-electronic integrated circuits through new capability for buried waveguides, low reflectivity facets and gratings structures.

Paper Details

Date Published: 12 February 2010
PDF: 9 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160A (12 February 2010); doi: 10.1117/12.841612
Show Author Affiliations
Kristian M. Groom, The Univ. of Sheffield (United Kingdom)
Benjamin J. Stevens, The Univ. of Sheffield (United Kingdom)
Punima D. L. Greenwood, The Univ. of Sheffield (United Kingdom)
David T. D. Childs, The Univ. of Sheffield (United Kingdom)
John S. Roberts, The Univ. of Sheffield (United Kingdom)
Matthew Lomas, The Univ. of Sheffield (United Kingdom)
Maxime Hugues, The Univ. of Sheffield (United Kingdom)
Hifsa Shahid, The Univ. of Sheffield (United Kingdom)
Richard Hogg, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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