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Proceedings Paper

Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications
Author(s): Arantxa Vilalta-Clemente; Magali Morales; Marie P. Chauvat; Yadira Arroyo-Rojas Dasilva; Marie A. Poisson; Michael Heuken; Christoph Giesen; Pierre Ruterana
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Paper Abstract

InAlN/GaN layers grown by metalorganic vapor phase epitaxy have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is shown that the surface morphology and the crystallinity of the InAlN layers critically depend on the In composition. AFM analysis points out that step flow growth may not be easily attained in this system: when the InAlN or AlN interlayer thickness is increased, the growth mode becomes three dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope. From the TEM investigation, it is pointed out that v-shaped defects are present at the surface of some layers and they may be as deep as the whole ternary alloy, they are connected to threading dislocations originated from the underlying template layers. As expected the measured residual strain is minimum when the ternary layer composition is close to 16-17% In.

Paper Details

Date Published: 12 March 2010
PDF: 9 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020K (12 March 2010); doi: 10.1117/12.841605
Show Author Affiliations
Arantxa Vilalta-Clemente, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)
Magali Morales, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)
Marie P. Chauvat, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)
Yadira Arroyo-Rojas Dasilva, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)
Marie A. Poisson, Alcatel-Thales III-V Lab. (France)
Michael Heuken, AIXTRON AG (Germany)
Christoph Giesen, AIXTRON AG (Germany)
Pierre Ruterana, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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