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Proceedings Paper

The electrical and optical properties of doped BTO thin films
Author(s): Zhipeng Liu; Zhenlun Zhang; Gang Sheng; Pingxiong Yang; Junhao Chu
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Paper Abstract

BaTiO3 thin films with different dopants of Fe and Co were prepared by sol-gel technique on Si and LaNiO3 coating Si substrates respectively. The x-ray diffraction patterns showed that all the films were perovskite structure and the change of lattice constant caused by dopants was undetectable. Atomic Force Microscope (AFM) was used to characterize the surface morphology of the thin films. The surfaces of films were uniform and dense except Co-doped BaTiO3 film on Si substrate. The Raman spectra showed the Fe dopant could improve the crystal quality of BTO films on these two different substrates. The results of UV reflectance for BTO thin films prepared on Si substrates showed that the reflectance peaks of Fe-doped BTO film moved to the low frequency. The Pt top electrodes were fabricated on BaTiO3/LaNiO3/Si to form a metal-ferroelectrics-metal structure and the dielectric properties of the thin films were carried out by impedance analyzer. It was found that Co dopant could increase the dielectric constant of BTO film to some extent and the Fe dopant could decrease the dielectric constant of film below 30 kHz. Both of the dopants could increase the dielectric loss of the films with the frequency increasing.

Paper Details

Date Published: 12 October 2009
PDF: 6 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751812 (12 October 2009); doi: 10.1117/12.841596
Show Author Affiliations
Zhipeng Liu, East China Normal Univ. (China)
Zhenlun Zhang, East China Normal Univ. (China)
Gang Sheng, East China Normal Univ. (China)
Pingxiong Yang, East China Normal Univ. (China)
Junhao Chu, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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