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Proceedings Paper

Simulation of a 1550-nm InGaAsP-InP transistor laser
Author(s): Wei Shi; Zigang Duan; Raha Vafaei; Nicolas Rouger; Behnam Fariji; Lukas Chrostowski
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Paper Abstract

A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ~ 4. The optical saturation and voltage-controlled operation are also demonstrated.

Paper Details

Date Published: 26 October 2009
PDF: 7 pages
Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 75160P (26 October 2009); doi: 10.1117/12.841564
Show Author Affiliations
Wei Shi, Univ. of British Columbia (Canada)
Zigang Duan, Shenzhen Univ. (China)
Raha Vafaei, Univ. of British Columbia (Canada)
Nicolas Rouger, Univ. of British Columbia (Canada)
Behnam Fariji, Univ. of British Columbia (Canada)
Lukas Chrostowski, Univ. of British Columbia (Canada)


Published in SPIE Proceedings Vol. 7516:
Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration
Zishen Zhao; Ray T. Chen; Yong Chen; Jinzhong Yu; Junqiang Sun; Weiwei Dong, Editor(s)

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