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Proceedings Paper

Realization of high-efficiency AlGaN-based ultraviolet light emitters
Author(s): Seong-Ran Jeon; Sung-Jai Lee; In-Ki Kang; Jai Bum Kim; Nam Hwang; Sung-Jin Son
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Paper Abstract

We have reported the growth and characterization of quaternary AlGaInN bulk layer and AlGaInN/InGaN MQWs grown by metal-organic chemical vapor deposition (MOCVD) for high efficiency ultraviolet light-emitting diodes. The inclusion of the small fraction of the indium in AlGaInN layer was found to lead a fewer structural defects and reduction of strain in the layer. From the temperature dependent photoluminescence (TDPL) and time-resolved PL (TRPL), the internal quantum efficiency at 300K was obtained as 60 % for sample grown with quaternary AlGaInN barrier in MQWs and 25 % for the sample with ternary AlGaN barrier. It was resulted that the dominant optical transition in AlGaInN/InGaN MQWs was due to localized exciton recombination and reduction of strain in the QW stack with indium incorporation in the barriers, resulting the longest decay lifetime from quaternary AlGaInN alloys. We measured the optical output power from the UV LED device grown with quaternary AlGaInN barriers.

Paper Details

Date Published: 12 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021F (12 March 2010); doi: 10.1117/12.841550
Show Author Affiliations
Seong-Ran Jeon, Korea Photonics Technology Institute (Korea, Republic of)
Sung-Jai Lee, Korea Photonics Technology Institute (Korea, Republic of)
In-Ki Kang, Korea Photonics Technology Institute (Korea, Republic of)
Jai Bum Kim, Korea Photonics Technology Institute (Korea, Republic of)
Nam Hwang, Korea Photonics Technology Institute (Korea, Republic of)
Sung-Jin Son, LG Innotek (Korea, Republic of)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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