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Proceedings Paper

Novel types of silicon waveguides fabricated using proton beam irradiation
Author(s): E. J. Teo; P. Yang; B. Q. Xiong; M. B. H. Breese; G. Z. Mashanovich; Y. S. Ow; G. T. Reed; A. A. Bettiol
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Paper Abstract

In this work, we describe the use of a combination of proton beam irradiation and electrochemical etching to fabricate high index-contrast waveguides directly in silicon without the need for silicon-on-insulator substrate. Various types of waveguides with air or porous silicon cladding have been demonstrated. We show that porous silicon (PS) is a flexible cladding material due to the tunability of its refractive index and thickness. The Si/PS waveguide system also possesses better transmittance in the ranges of 1.2-9 and 23-200 μm, compared to Si/SiO2 waveguides. This is potentially important for mid and far-IR applications. Since it is compatible with conventional CMOS technology, this process can be used for fabrication of integrated optoelectronics circuits.

Paper Details

Date Published: 17 February 2010
PDF: 7 pages
Proc. SPIE 7606, Silicon Photonics V, 76060M (17 February 2010); doi: 10.1117/12.841536
Show Author Affiliations
E. J. Teo, National Univ. of Singapore (Singapore)
P. Yang, Univ. of Surrey (United Kingdom)
B. Q. Xiong, National Univ. of Singapore (Singapore)
M. B. H. Breese, National Univ. of Singapore (Singapore)
G. Z. Mashanovich, Univ. of Surrey (United Kingdom)
Y. S. Ow, National Univ. of Singapore (Singapore)
G. T. Reed, Univ. of Surrey (United Kingdom)
A. A. Bettiol, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

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