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Proceedings Paper

Output power enhancement of light-emitting diodes with defect passivation layer
Author(s): Ming-Hua Lo; Po-Min Tu; Yuh-Jen Cheng; Chao-Hsun Wang; Cheng-Wei Hung; Shih-Chieh Hsu; Hao-Chung Kuo; Hsiao-Wen Zan; Shing-Chung Wang; Chun-Yen Chang; Che-Ming Liu
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Paper Abstract

We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ~4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

Paper Details

Date Published: 16 March 2010
PDF: 6 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021X (16 March 2010); doi: 10.1117/12.841513
Show Author Affiliations
Ming-Hua Lo, National Chiao Tung Univ. (Taiwan)
Po-Min Tu, National Chiao Tung Univ. (Taiwan)
Yuh-Jen Cheng, National Chiao Tung Univ. (Taiwan)
Research Ctr. for Applied Sciences, Academia Sinica (Taiwan)
Chao-Hsun Wang, National Chiao Tung Univ. (Taiwan)
Cheng-Wei Hung, National Chiao Tung Univ. (Taiwan)
Shih-Chieh Hsu, Tamkang Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Hsiao-Wen Zan, National Chiao Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao Tung Univ. (Taiwan)
Chun-Yen Chang, National Chiao Tung Univ. (Taiwan)
Che-Ming Liu, Sino-American Silicon Products Inc. (Taiwan)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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