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Proceedings Paper

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes
Author(s): Yik-Khoon Ee; Xiao-Hang Li; Jeff Biser; Wanjun Cao; Helen M. Chan; Richard P. Vinci; Nelson Tansu
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Paper Abstract

Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nano-patterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15nm low temperature GaN buffer and bypassing etchback and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Paper Details

Date Published: 12 February 2010
PDF: 8 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76170G (12 February 2010); doi: 10.1117/12.841503
Show Author Affiliations
Yik-Khoon Ee, Lehigh Univ. (United States)
Xiao-Hang Li, Lehigh Univ. (United States)
Jeff Biser, Lehigh Univ. (United States)
Wanjun Cao, Lehigh Univ. (United States)
Helen M. Chan, Lehigh Univ. (United States)
Richard P. Vinci, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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