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Proceedings Paper

The effects of electric and magnetic field on the hydrogenic donor impurity in GaN/AlxGa1-xN spherical quantum dot
Author(s): Hai-Long Wang; Hui-Ting Wu; Qian Gong; Song-Lin Feng
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Paper Abstract

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot (QD) is investigated using the plane wave basis. The dependencies of the binding energy on electric field, magnetic field, QD radius and impurity position are obtained. The maximum of impurity binding energy is shifted from the centre of QD and the degenerating energy located for symmetrical positions with respect to the centre of QD are split in presence of the external electric field. The binding energy increases with the increases of magnetic field when the impurity located at the centre of QD. In the presence of electric and magnetic field simultaneously, an increase in the electric field strength leads to a decrease of the maxima of binding energy with an increase in magnetic field.

Paper Details

Date Published: 24 February 2010
PDF: 8 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100Z (24 February 2010); doi: 10.1117/12.841411
Show Author Affiliations
Hai-Long Wang, Qufu Normal Univ. (China)
Hui-Ting Wu, Qufu Normal Univ. (China)
Qian Gong, Shanghai Institute of Microsystem and Information Technology (China)
Song-Lin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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