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Proceedings Paper

Improved silicon light emission for reach- and punch-through devices in standard CMOS
Author(s): Petrus J. Venter; Monuko du Plessis
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Paper Abstract

A key requirement for the success of future microphotonic devices will be the ability to integrate such devices into current mainstream semiconductor technologies. The ability to create silicon-based light sources in a standard CMOS process is therefore very appealing. It is known that avalanche silicon LED efficiency can be increased using reach- and punch-through mechanisms. This paper reveals a technique for improving the operational performance of a silicon light source by increasing the external quantum efficiency and relaxing the separation requirements for the light source operating under the mentioned reach- or punch-through mechanisms in a standard unmodified local oxidation of silicon (LOCOS) CMOS process.

Paper Details

Date Published: 23 February 2010
PDF: 9 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 76070Z (23 February 2010); doi: 10.1117/12.841357
Show Author Affiliations
Petrus J. Venter, Carl & Emily Fuchs Institute for Microelectronics, Univ. of Pretoria (South Africa)
Monuko du Plessis, Carl & Emily Fuchs Institute for Microelectronics, Univ. of Pretoria (South Africa)


Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)

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