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Proceedings Paper

Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method
Author(s): Ko-Hsin Lee; James O'Callaghan; Brendan Roycroft; Chris L. L. M. Daunt; Hua Yang; Jeong Hwan Song; Frank H. Peters; Brian Corbett
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Paper Abstract

We report on quantum well intermixing of AlInGaAs-MQWs using the impurity-free vacancy diffusion method with dielectric capping layers which has potential for realization of photonic integrated circuits. The extent of the bandgap shifts with respect to different dielectric capping layers and alloy temperatures are investigated. The intermixing inhibitor and promoter are then integrated using combination of SiO2 and SiNx dielectric capping layers which shows a differential photoluminescence wavelength more than 110 nm. Based on this developed intermixing technique, we have fabricated AlInGaAs-InP based material stripe lasers emitting at two different wavelength ranges centered at 1519 nm and 1393 nm respectively. Characterizations including the current-voltage and electroluminescence measurements show that the integration of two-bandgaps can be achieved and furthermore a differential wavelength in lasing spectra up to 120 nm is demonstrated.

Paper Details

Date Published: 11 February 2010
PDF: 7 pages
Proc. SPIE 7604, Integrated Optics: Devices, Materials, and Technologies XIV, 76040J (11 February 2010); doi: 10.1117/12.841329
Show Author Affiliations
Ko-Hsin Lee, Tyndall National Institute (Ireland)
James O'Callaghan, Tyndall National Institute (Ireland)
Brendan Roycroft, Tyndall National Institute (Ireland)
Chris L. L. M. Daunt, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)
Hua Yang, Tyndall National Institute (Ireland)
Jeong Hwan Song, Tyndall National Institute (Ireland)
Frank H. Peters, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)
Brian Corbett, Tyndall National Institute (Ireland)

Published in SPIE Proceedings Vol. 7604:
Integrated Optics: Devices, Materials, and Technologies XIV
Jean-Emmanuel Broquin; Christoph M. Greiner, Editor(s)

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