Share Email Print
cover

Proceedings Paper

Thermal shock of silicon-based materials under multi-pulsed intense laser radiation
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The silicon-based materials are widely used in MEMS. In this article, the thermal shock property of silicon-based materials under the multi-pulsed laser irradiation is studied and theoretical deduction under a relative numerical case is performed. Based on the non-Fourier conduction and the thermo-elastic theories, theoretical expressions between temperature and thermal stress of a silicon-based material under the multi-pulse heat flow are deduced; regularities among inner surplus temperature, time and depth in a silicon-based target and corresponding boundary are studied; further more, curves of inner thermal stress in cases of different relation time are obtained by using the finite difference method. As results indicated, under the multi-pulsed laser irradiation, the temperature curves present a delayed character in different section away from the boundary, which are closely connected with the relaxation time. In the non-Fourier theoretical solution, the front of the stress wave is very steep and presents an obvious thermal shock property. The conclusion may be helpful to the micro-fabrication technology in the fields of MEMS.

Paper Details

Date Published: 20 October 2009
PDF: 6 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74932B (20 October 2009); doi: 10.1117/12.841222
Show Author Affiliations
Haiming Huang, Beijing Jiaotong Univ. (China)
Xiaoliang Xu, Beijing Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

© SPIE. Terms of Use
Back to Top