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Proceedings Paper

ICP etching of high Al mole fraction AlGaN
Author(s): Zhao Meng; Libo Yu; Xiao Li; Qibin Liu; Huiqiang Duan; Chenhui Yu; Changqing Chen
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Paper Abstract

The etching process has great influence on the performance of solar blind detector based on AlxGa1-xN epitaxial layers on sapphire substrate with high Al mole fraction grown by metal organic chemical vapor deposition (MOCVD) method. Traditional etching methods, including wet or reactive ion etching (RIE) are hard to achieve good result due to the high chemical-stability of AlGaN films with high Al mole fraction. In this paper, we studied on the inductively coupled plasma reactive ion etching (ICP-RIE) of high Al mole fraction AlxGa1-xN films (x>0.4) for fabricating high performance solar blind detectors. SiN was used as mask, and Cl2 and BCl3 were used as etching gas. Etching systems was selected from Oxford Inc. DC bias was controlled automatically. A 2.5:1 of selectivity on AlGaN and SiN was obtained with suitable flux and component of etching gas, RF power and ICP power. Etching velocity was adjusted mainly by RF power. The role of Ar, Cl2, and BCl3 in the etching process was also discussed.

Paper Details

Date Published: 13 October 2009
PDF: 5 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180H (13 October 2009); doi: 10.1117/12.841195
Show Author Affiliations
Zhao Meng, Southwest Institute of Technical Physics (China)
Libo Yu, Southwest Institute of Technical Physics (China)
Xiao Li, Southwest Institute of Technical Physics (China)
Qibin Liu, Southwest Institute of Technical Physics (China)
Huiqiang Duan, Huazhong Univ. of Science and Technology (China)
Chenhui Yu, Huazhong Univ. of Science and Technology (China)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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