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Proceedings Paper

Recent development of high-power-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel
Author(s): Chuanshun Cao; Li Fan; Irene Ai; Jiang Li; Brian Caliva; Linfei Zeng; Prabhu Thiagarajan; Mark McElhinney
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Paper Abstract

This paper gives an overview of recent development of high-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel. Focused development of device design and MBE growth processes has yielded significant improvement in power conversion efficiency (PCE) of 50-W CW TE/TM polarized 808-nm laser bars. We have achieved CW PCEs of 67 % to 64 % at heat-sink temperature of 5 °C and 25 °C, respectively. Ongoing life-testing indicates that the reliable powers of devices based on the new developments exceed those of established, highly reliable, production designs.

Paper Details

Date Published: 18 February 2010
PDF: 6 pages
Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830L (18 February 2010); doi: 10.1117/12.841057
Show Author Affiliations
Chuanshun Cao, Lasertel, Inc. (United States)
Li Fan, Lasertel, Inc. (United States)
Irene Ai, Lasertel, Inc. (United States)
Jiang Li, Lasertel, Inc. (United States)
Brian Caliva, Lasertel, Inc. (United States)
Linfei Zeng, Lasertel, Inc. (United States)
Prabhu Thiagarajan, Lasertel, Inc. (United States)
Mark McElhinney, Lasertel, Inc. (United States)


Published in SPIE Proceedings Vol. 7583:
High-Power Diode Laser Technology and Applications VIII
Mark S. Zediker, Editor(s)

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