Share Email Print
cover

Proceedings Paper

A compact high-performance germanium photodetector integrated on 0.25μm thick silicon-on-insulator waveguide
Author(s): Ning-Ning Feng; Shirong Liao; Po Dong; Dawei Zheng; Hong Liang; Cheng-Chih Kung; Roshanak Shafiiha; Dazeng Feng; Guoliang Li; John E. Cunningham; Ashok V. Krishnamoorthy; Mehdi Asghari
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report a very compact (1.6μmx10μm) and low dark current (20nA) Germanium p-i-n photodetector integrated on 0.25μm thick silicon-on-insulator (SOI) waveguides. A thin layer of Germanium was selective-epitaxially grown on top of SOI waveguides. Light is evanescently coupled into Germanium layer from the bottom SOI waveguide. The device demonstrates superior performance with demonstrated responsivity of 0.9A/W and 0.56A/W at wavelength of 1300nm and 1550nm, respectively, and dark current less than 20nA at -0.5V bias. The 3dB bandwidth of the device is measured to be 23GHz at -0.5V bias.

Paper Details

Date Published: 16 February 2010
PDF: 6 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760704 (16 February 2010); doi: 10.1117/12.841052
Show Author Affiliations
Ning-Ning Feng, Kotura, Inc. (United States)
Shirong Liao, Kotura, Inc. (United States)
Po Dong, Kotura, Inc. (United States)
Dawei Zheng, Kotura, Inc. (United States)
Hong Liang, Kotura, Inc. (United States)
Cheng-Chih Kung, Kotura, Inc. (United States)
Roshanak Shafiiha, Kotura, Inc. (United States)
Dazeng Feng, Kotura, Inc. (United States)
Guoliang Li, Sun Microsystems, Inc. (United States)
John E. Cunningham, Sun Microsystems, Inc. (United States)
Ashok V. Krishnamoorthy, Sun Microsystems, Inc. (United States)
Mehdi Asghari, Kotura, Inc. (United States)


Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)

© SPIE. Terms of Use
Back to Top