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Proceedings Paper

Floating gate memory paper transistor
Author(s): R. Martins; L. Pereira; P. Barquinha; N. Correia; G. Gonçalves; I. Ferreira; C. Dias; E. Fortunato
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Paper Abstract

Reported herein is a nonvolatile n-type floating gate memory paper field-effect transistor, emphasizing the role of the paper structure and properties on the device performance recorded such as in the high capacitance per unit area at low frequencies (>2.5 μFcm-2) and so on the set of high charge retention times achieved (>16000 hours). The device was built via the hybrid integration of natural cellulose fibers, which act simultaneously as substrate and gate dielectric, using amorphous indium zinc and gallium indium zinc oxides respectively for the gate electrode and channel layer. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

Paper Details

Date Published: 15 February 2010
PDF: 11 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760314 (15 February 2010); doi: 10.1117/12.841036
Show Author Affiliations
R. Martins, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
L. Pereira, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
P. Barquinha, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
N. Correia, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
G. Gonçalves, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
I. Ferreira, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
C. Dias, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)
E. Fortunato, CENIMAT, Univ. Nova de Lisboa (Portugal)
CEMOP-UNINOVA (Portugal)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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