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Proceedings Paper

Post-annealing of p-type ZnO:Sb thin film grown by pulsed laser deposition
Author(s): Y. Yata; T. Sakano; M. Obara
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Paper Abstract

We present the effect of post-annealing on the p-type ZnO:Sb thin film. The ZnO:Sb thin films were grown by pulsed laser deposition (PLD) method. Undoped ZnO thin film was inserted between the ZnO:Sb thin films and GaN template/sapphire substrate to reduce lattice mismatch. The ZnO:Sb thin films grown in the temperature range of 400 °C and 800 °C were all n-type in the as-grown state. However, when post-annealing was performed the film grown at 600 °C and annealed at 700 °C for 60 min showed p-type conductivity with a hole concentration of 1.4 x 1017 cm-3 and a reasonable mobility of 6.7 cm2/Vs. The annealed ZnO:Sb thin film grown at a relatively low temperature of 400 °C was highly resistive with a resistivity of 1.95 x 105 Ωcm. This was perhaps due to the low incorporation of Sb in the film. ZnO:Sb thin film grown at a relatively high temperature of 800 °C showed n-type conductivity even after annealing, and the carrier concentration only dropped from 1.32 x 1017 cm-3 of the as-grown state to 3.08 x 1015 cm-3 after annealing. This may have been due to the formation of Sb compound in ZnO inhibiting the activation of Sb during post-annealing. Therefore, post-annealing of ZnO:Sb grown at adequate temperature is crucial to obtain p-type ZnO thin film.

Paper Details

Date Published: 15 February 2010
PDF: 7 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 76031R (15 February 2010); doi: 10.1117/12.840973
Show Author Affiliations
Y. Yata, Keio Univ. (Japan)
T. Sakano, Keio Univ. (Japan)
M. Obara, Keio Univ. (Japan)

Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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