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Proceedings Paper

Review of nitride infrared intersubband devices
Author(s): Maria Tchernycheva; François H. Julien; Eva Monroy
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Paper Abstract

We present a review of the intersubband optoelectronic technology based on GaN/AlGaN quantum wells or quantum dots. Three kinds of devices are discussed: intersubband light emitters, photodetectors and optical modulators. The operation principle, device performance and future developments are exposed.

Paper Details

Date Published: 11 March 2010
PDF: 12 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021A (11 March 2010); doi: 10.1117/12.840934
Show Author Affiliations
Maria Tchernycheva, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
François H. Julien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
Eva Monroy, Commissariat à l'Énergie Atomique (France)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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