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Proceedings Paper

Nano-ultrasonic based on GaN nano-layers
Author(s): Chi-Kuang Sun; Yu-Chieh Wen; Yi-Hsin Chen; Kung-Hsuan Lin
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Paper Abstract

We review our current development on nano-ultrasonic by using piezoelectric nano-layers based on the GaN material system. Our study indicated that piezoelectric semiconductor nanostructures can serve as optical piezoelectric transducers to generate and detect nanoacoustic waves through the piezoelectric effect. The nanoacoustic waves, with a wavelength on the order of or shorter than 10 nm, can be used for high accuracy THz electron control, noninvasive subnanometer interface probing, and nano-ultrasonic imaging. Detailed design principles and the applications to the study of lattice/molecular dynamics in condense matters are discussed.

Paper Details

Date Published: 12 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020Q (12 March 2010); doi: 10.1117/12.840826
Show Author Affiliations
Chi-Kuang Sun, National Taiwan Univ. (Taiwan)
Research Ctr. for Applied Sciences (Taiwan)
Yu-Chieh Wen, National Taiwan Univ. (Taiwan)
Yi-Hsin Chen, National Taiwan Univ. (Taiwan)
Kung-Hsuan Lin, Industrial Technology Research Institute South (Taiwan)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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