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Proceedings Paper

GaP single crystal layers grown on GaN by MOCVD
Author(s): Shuti Li; Jianxing Cao; Guanghan Fan; Yong Zhang; Shuwen Zheng; Huiqing Sun; Jun Su
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Paper Abstract

The GaP layers grown on GaN layer by Metalo-organic chemical vapour deposition (MOCVD) were studied. The results show that the GaP layers are single crystals when the growth temperature varied from 350°C to 500°C. However, the crystal quality of GaP grown at low temperature is not good. Using a 40 nm GaP buffer layer grown at 400°C, the crystal quality of GaP grown at 680°C improves evidently. The p-type GaP layers with hole carrier concentration of 4.2×1018 cm-3 were obtained by CP2Mg doping.

Paper Details

Date Published: 13 October 2009
PDF: 7 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180F (13 October 2009); doi: 10.1117/12.840796
Show Author Affiliations
Shuti Li, South China Normal Univ. (China)
Jianxing Cao, South China Normal Univ. (China)
Guanghan Fan, South China Normal Univ. (China)
Yong Zhang, South China Normal Univ. (China)
Shuwen Zheng, South China Normal Univ. (China)
Huiqing Sun, South China Normal Univ. (China)
Jun Su, South China Normal Univ. (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies

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