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Proceedings Paper

High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes
Author(s): James W. Raring; Eric M. Hall; Mathew C. Schmidt; Christiane Poblenz; Ben Li; Nick Pfister; Daniel F. Feezell; Richard Craig; James S. Speck; Steven P. DenBaars; Shuji Nakamura
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Paper Abstract

We present new advances in green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN substrates. Using these novel crystal orientations, we report high power, high efficiency, continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we present continuous-wave lasing demonstrations out to 523 nm, representing the longest continuous-wave green laser emission reported to date. Wall-plug efficiencies of over 25% in the violet region, 16.2% in the blue region, and 2.2% in the 500 nm range are presented. These InGaN-based devices offer dramatic improvement in size, weight, and cost over conventional gas or solid state lasers and may enable a variety of new applications in defense, biomedical, industrial, and consumer projection displays.

Paper Details

Date Published: 10 March 2010
PDF: 10 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760218 (10 March 2010); doi: 10.1117/12.840783
Show Author Affiliations
James W. Raring, Kaai, Inc. (United States)
Eric M. Hall, Kaai, Inc. (United States)
Mathew C. Schmidt, Kaai, Inc. (United States)
Christiane Poblenz, Kaai, Inc. (United States)
Ben Li, Kaai, Inc. (United States)
Nick Pfister, Kaai, Inc. (United States)
Daniel F. Feezell, Kaai, Inc. (United States)
Richard Craig, Kaai, Inc. (United States)
James S. Speck, Kaai, Inc. (United States)
Steven P. DenBaars, Kaai, Inc. (United States)
Shuji Nakamura, Kaai, Inc. (United States)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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