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Proceedings Paper

Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask
Author(s): Winnie N. Ye; Peter Duane; Munib Wober; Kenneth B. Crozier
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Paper Abstract

We report the development of new fabrication techniques for creating high aspect ratio optical lightpipes in SiO2 layers of 10μm thickness and above. A dielectric photo mask was used for deep reactive ion etching. Our experiments show that CF4-based reaction gases were best for deep etching with high selectivity and etch rate. Trenches with diameters or width of 1.5μm were demonstrated, with an aspect ratio of 7.2:1 and a sidewall angle of 87.4 degrees. We also present the lift-off process of the etch masks and the via-filling procedures for the lightpipes. These structures are useful for image sensors, vertical interconnect and waveguiding applications.

Paper Details

Date Published: 16 February 2010
PDF: 8 pages
Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 75910D (16 February 2010); doi: 10.1117/12.840725
Show Author Affiliations
Winnie N. Ye, Harvard Univ. (United States)
Zena Technologies Inc. (United States)
Peter Duane, Zena Technologies Inc. (United States)
Munib Wober, Zena Technologies Inc. (United States)
Kenneth B. Crozier, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 7591:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III
Winston V. Schoenfeld; Jian Jim Wang; Marko Loncar; Thomas J. Suleski, Editor(s)

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