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Proceedings Paper

Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications
Author(s): Othman Rehioui; Laurent Bechou; Thierry Fillardet; Andreas Kohl; Yves Ousten; Gerard Volluet
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Paper Abstract

Degradation analysis of 808nm QCW laser diode array for space application has been investigated by using individual emitter characterization technique. We found that homogeneity of electro-optical characteristics at emitter level along the bar is a relevant parameter to ensure the reliability of the bars. This work is focused on the importance of individual emitter characterization and aging test results analysis up to 4.47 Gshots.

Paper Details

Date Published: 18 February 2010
PDF: 9 pages
Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 758314 (18 February 2010); doi: 10.1117/12.840671
Show Author Affiliations
Othman Rehioui, IMS-Labs., CNRS, Univ. Bordeaux (France)
Quantel Laser Diodes (France)
Laurent Bechou, IMS-Labs., CNRS, Univ. Bordeaux (France)
Thierry Fillardet, Quantel Laser Diodes (France)
Andreas Kohl, Quantel Laser Diodes (France)
Yves Ousten, IMS-Labs., CNRS, Univ. Bordeaux (France)
Gerard Volluet, Quantel Laser Diodes (France)


Published in SPIE Proceedings Vol. 7583:
High-Power Diode Laser Technology and Applications VIII
Mark S. Zediker, Editor(s)

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