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Proceedings Paper

Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W
Author(s): B. Sumpf; P. Adamiec; J. Fricke; P. Ressel; H. Wenzel; G. Erbert; G. Tränkle
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Paper Abstract

650 nm tapered laser diodes with nearly diffraction limited beam quality are requested for laser display applications. In this paper, results for 2 mm long 650 nm tapered lasers diodes with different lateral geometries will be presented. The vertical structure is based on a 5 nm thick InGaP single quantum well embedded in AlGaInP waveguide and n- AlInP and p-AlGaAs cladding layers. The ridge waveguides of lengths LRW = 200 μm, 300 μm, 500 μm, and 750 μm were fabricated using selective etching. The contact window for the tapered section was defined applying ion implantation. Devices with a taper angle of 4° were manufactured. The facets were passivated. The rear side was high reflection coated and the taper side anti reflection coated. The devices were mounted p-side down on CVDdiamond heat spreaders and standard C-mounts. All devices reached a maximal output power larger than 1 W. They had a threshold current density of about 700 A/cm2 and a slope efficiency of 0.8 W/A. The best conversion efficiency was 20%. The devices with the shortest RW-length LRW = 200 μm had the best beam quality (beam waist width 7 μm, far field angle 8.8°, 85% of the emitted power in central lobe, M2 of 1.3 (all values measured at 1/e2-level)) at P = 1 W. The beam quality for devices with longer RW-section deteriorates up to M2 = 4.4 for a LRW = 750 μm laser.

Paper Details

Date Published: 12 February 2010
PDF: 8 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161H (12 February 2010); doi: 10.1117/12.840642
Show Author Affiliations
B. Sumpf, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
P. Adamiec, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
J. Fricke, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
P. Ressel, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
H. Wenzel, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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