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Proceedings Paper

Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction
Author(s): Arjun Mandal; Subhananda Chakrabarti
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Paper Abstract

ZnO thin films were deposited over n+ InP (100) substrates by Pulsed Laser Deposition (PLD) technique at 400°C temperature in an oxygen ambient of 75 mTorr followed by Rapid Thermal Annealing (RTA) at the temperatures 450°C, 550°C and 650°C respectively. XRD results revealed that the full width at half maxima (FWHM) of the annealed samples were narrower (0.1836°) compared to that of the as grown sample (0.3264°) for the c-axis oriented ZnO (002) films. A lower strain (~ -0.23%) and less biaxial compressive stress (~ -1.063 GPa) were observed for the annealed samples. AFM images depicted lowest surface roughness of 7.257 nm (root-mean-square) for the film annealed at 550°C. A high absorption coefficient of 28.12 μm-1 was calculated around 380 nm wavelength from the UV/VIS spectroscopy in reflection mode for the as-grown sample. The optical band gap was calculated to be about 3.23 eV. p-type ZnO film, grown under same condition (annealed at 550°C) over semi insulating InP (100) substrates had a high hole concentration of 2.95X1019 cm-3 and Hall mobility of 8.63 cm2/V-s at room temperature. Current Rectification Ratio (IF/IR) |V|=1.5 of 17.2 was measured from the I-V characteristics of the p-ZnO/n+-InP heterojunction diode fabricated with the ZnO film annealed at 550°C.

Paper Details

Date Published: 15 February 2010
PDF: 8 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 76031P (15 February 2010); doi: 10.1117/12.840525
Show Author Affiliations
Arjun Mandal, Indian Institute of Technology (India)
Subhananda Chakrabarti, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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