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Proceedings Paper

GaN-based VCSELs: analysis of internal device physics and performance limitations
Author(s): Joachim Piprek; Simon Li
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Paper Abstract

GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantages over their already widely used edge-emitting counterparts, including lower manufacturing costs, circular output beams, and longer lifetime. However, in contrast to the great success of GaN-based edge-emitting lasers in recent years, GaN-VCSELs still face significant challenges. Electrically pumped devices have been demonstrated only recently and they exhibit severe performance restrictions. We here analyze these recently manufactured GaN-VCSELs using advanced laser simulation software. The simulation self-consistently combines carrier transport, photon emission, and multi-mode optical wave guiding. For the quantum wells, Schrödinger and Poisson equations are solved iteratively at every bias point to account for the Quantum-Confined Stark Effect. Our analysis shows that thick quantum wells allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., gain-peak offset, current crowding, and electron leakage. Design optimization options are discussed and simulated.

Paper Details

Date Published: 10 March 2010
PDF: 10 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760217 (10 March 2010); doi: 10.1117/12.840515
Show Author Affiliations
Joachim Piprek, NUSOD Institute LLC (United States)
Simon Li, Crosslight Software Inc. (Canada)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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