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Proceedings Paper

The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers
Author(s): S. W. Chen; T. T. Kao; T. T. Wu; T. C. Lu; H. C. Kuo; S. C. Wang
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Paper Abstract

GaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were fabricated and analyzed. Different lasing characteristics of GaN-based PCSEL has been determeined and demonstrated by the PC lattice constants. The laser emission behavior covered the whole PC patterns of 50 μm in diameter. Under the optical pumping at room temperature, the PCSEL with PC lattice constant of 230nm shows a threshold energy density of about 2.7 mJ/cm2. Above the threshold, one dominated peak emits at 420.11 nm with a linewidth of 1.1 Å. The lasing wavelength emitted from PC lasers with different lattice constants occurs at the calculated band-edges provided by the PC patterns which further shows different polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ, K, and M directions in the K-space. The PCSEL also shows a characteristic temperature of 148K and a spontaneous emission coupling efficiency β of about 5x10-3. Besides, the coupled-wave model in the PC hexagonal-lattice is applied to distinguish the discrepancy in threshold power and the corresponding coupling coefficient. The results show the lasing actions within Γ, K, and M modes have the substantial relation between the threshold energy density and the coupling coefficient.

Paper Details

Date Published: 10 March 2010
PDF: 10 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760215 (10 March 2010); doi: 10.1117/12.840487
Show Author Affiliations
S. W. Chen, National Chiao Tung Univ. (Taiwan)
T. T. Kao, National Chiao Tung Univ. (Taiwan)
T. T. Wu, National Chiao Tung Univ. (Taiwan)
T. C. Lu, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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