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Proceedings Paper

Fabrication of silicon photonic devices by utilizing industrial CMOS technology
Author(s): Yong Zhao; Haifeng Zhou; Wanjun Wang; Jianyi Yang; Minghua Wang; Xiaoqing Jiang
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Paper Abstract

Using 0.8μm industrial CMOS technology, a 1×2 optical switch based on the carrier dispersion effect was fabricated. The device employed the conventional P-I-N structure with a typical 1μm-wide waveguide. The main process flow is presented in detail. The switching extinction ratio and the speed of the 1×2 switch are 21dB and 20ns, respectively. The fabrication repeatability is stable and reliable.

Paper Details

Date Published: 27 October 2009
PDF: 6 pages
Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 751606 (27 October 2009); doi: 10.1117/12.840469
Show Author Affiliations
Yong Zhao, Zhejiang Univ. (China)
Haifeng Zhou, Zhejiang Univ. (China)
Wanjun Wang, Zhejiang Univ. (China)
Jianyi Yang, Zhejiang Univ. (China)
Minghua Wang, Zhejiang Univ. (China)
Xiaoqing Jiang, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 7516:
Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration
Zishen Zhao; Ray T. Chen; Yong Chen; Jinzhong Yu; Junqiang Sun; Weiwei Dong, Editor(s)

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