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Proceedings Paper

The evaluation and measurement of AlGaN epitaxial layer with high Al mole fraction
Author(s): Zhao Meng; Libo Yu; Xiao Li; Qibin Liu; Huiqiang Duan; Chenhui Yu; Changqing Chen
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Paper Abstract

The epitaxial layer quality of AlxGa1-xN (x>0.6) on sapphire substrate grown by metal organic chemical vapor deposition (MOCVD) needs to be further improved. In this paper, we evaluated the properties of defects, lattice mismatch between epitaxial layer and substrate, crystal quality and conductivity for these high Al mole fraction materials from the viewpoint of fabricating high performance solar blind detectors by comprehensive utilizing various undamaged measurements. The measurement of transmission spectrum was used to evaluate the absorption edge, band gap, mole fraction of Al content, hetero-epitaxial interface, and transmissivity in the ultraviolet spectral range. X-ray diffraction (XRD) was used to measure the component of the AlGaN material, uniformity of the material and crystal quality. The conductivity of the surface layer of the AlGaN film material was obtained by using high precision current-voltage curve measurement. In short, the material quality, optical and electrical properties, and uniformity for high Al mole fraction AlGaN epitaxial layers were qualitatively or quantitatively measured and analyzed. These works lay the foundation for manufacturing high performance solar blind ultraviolet detectors based on high Al mole fraction AlGaN epitaxial materials on sapphire substrate.

Paper Details

Date Published: 13 October 2009
PDF: 7 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751813 (13 October 2009); doi: 10.1117/12.840465
Show Author Affiliations
Zhao Meng, South-West Institute of Technical Physics (China)
Libo Yu, South-West Institute of Technical Physics (China)
Xiao Li, South-West Institute of Technical Physics (China)
Qibin Liu, South-West Institute of Technical Physics (China)
Huiqiang Duan, Huazhong Univ. of Science and Technology (China)
Chenhui Yu, Huazhong Univ. of Science and Technology (China)
Changqing Chen, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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