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Optimum operation of single cavity photonic switchesFormat | Member Price | Non-Member Price |
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Paper Abstract
In this work, an optimum frequency is found for the operation of single cavity photonic switches. At this optimum point,
the transmission contrast of ON and OFF states takes its highest value, while keeping the device power threshold
relatively low and the device speed acceptably high. Then, the dynamic behavior of a typical single cavity all optical
switch is investigated in the optimum operation point through temporal Coupled Mode Theory. Switching speed and
power are discussed, and the device is shown to be applicable for telecommunication and data processing applications.
The analysis is quite general, and can be used for resonant structures, such as photonic crystals and microring resonators,
in both side coupled and direct coupled configurations.
Paper Details
Date Published: 24 February 2010
PDF: 6 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760719 (24 February 2010); doi: 10.1117/12.840463
Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)
PDF: 6 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760719 (24 February 2010); doi: 10.1117/12.840463
Show Author Affiliations
Ali Naqavi, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Zahra Monem Haghdoost, Sharif Univ. of Technology (Iran, Islamic Republic of)
Masoud Edalatipour, Sharif Univ. of Technology (Iran, Islamic Republic of)
Zahra Monem Haghdoost, Sharif Univ. of Technology (Iran, Islamic Republic of)
Masoud Edalatipour, Sharif Univ. of Technology (Iran, Islamic Republic of)
Sina Khorasani, Sharif Univ. of Technology (Iran, Islamic Republic of)
Khashayar Mehrany, Sharif Univ. of Technology (Iran, Islamic Republic of)
Khashayar Mehrany, Sharif Univ. of Technology (Iran, Islamic Republic of)
Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)
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