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Proceedings Paper

Resist double patterning on BARCs and spin-on multilayer materials
Author(s): Douglas J. Guerrero; Daniel M. Sullivan; Ramil-Marcelo L. Mercado
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Paper Abstract

Many approaches to double patterning have been devised, of which most have been designed to reduce the number of process steps. The litho-freeze-litho-etch process (LFLE) is one such technique that eliminates the first etch step from the standard litho-etch litho-etch (LELE) process. The resist freeze material chemically modifies the patterned photoresist, as well as potentially the layer beneath, which may result in a performance change at the second lithography step. Another approach, litho-process-litho-etch (LPLE) does not involve the use of a chemical freeze material, instead relying on a thermal treatment to remove excess solvent from the polymer and differential energy of activation between two resists to create a double-patterned image. Finally, double patterning using negative-tone development of a positiveacting photoresist is another approach in consideration. In this paper, we present the results of several double-patterning processes on organic bottom anti-reflective coatings (BARCs) and spin-on multilayer stacks consisting of a silicon hardmask on top of a carbon underlayer. Pattern profiles of the first and second lithography steps are compared.

Paper Details

Date Published: 11 December 2009
PDF: 8 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200M (11 December 2009); doi: 10.1117/12.840419
Show Author Affiliations
Douglas J. Guerrero, Brewer Science, Inc. (United States)
Daniel M. Sullivan, Brewer Science, Inc. (United States)
Ramil-Marcelo L. Mercado, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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