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Proceedings Paper

Microscopic theoretical analysis of optically generated injection currents in semiconductor quantum wells
Author(s): Huynh Thanh Duc; Jens Förstner; Torsten Meier
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Paper Abstract

A microscopic theory that describes injection currents in GaAs quantum wells is presented. 14 × 14 band k.p theory is used to compute the band structure including anisotropy and spin-orbit interaction. Transient injection currents are obtained via numerical solutions of the semiconductor Bloch equations. Depending on the growth direction of the considered quantum well system and the propagation and polarization directions of the incident light beam, it is possible to generate charge and/or spin photocurrents on ultrashort time scales. The dependence of the photocurrents on the excitation conditions is computed and discussed.

Paper Details

Date Published: 1 March 2010
PDF: 9 pages
Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76000S (1 March 2010); doi: 10.1117/12.840388
Show Author Affiliations
Huynh Thanh Duc, Univ. Paderborn (Germany)
Jens Förstner, Univ. Paderborn (Germany)
Torsten Meier, Univ. Paderborn (Germany)

Published in SPIE Proceedings Vol. 7600:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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