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Proceedings Paper

Preparation, microstructure characterization and dielectric properties of relaxor ferroelectric thick films
Author(s): Huiqing Fan; Jin Chen
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Paper Abstract

The phase structure and the microstructure of pyrochlor-free (1-x)PMN-xPT (x=0.2~0.4) relaxor ferroelectric thick films prepared by an electrophoretic deposition on Pt substrate were investigate by XRD and SEM. The dielectric permittivity maximum εm (at 1 kHz) were in the range of 18000~26500. Relaxor-like behavior was clearly demonstrated in PMN-PT thick-films. Deviation from Curie-Weiss behavior and temperature evolution of the local order parameter were found in the films. The degree of relaxation obtained from the modified Curie-Weiss law strongly suggests the relaxor behavior.

Paper Details

Date Published: 20 October 2009
PDF: 5 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74935G (20 October 2009); doi: 10.1117/12.840379
Show Author Affiliations
Huiqing Fan, Northwestern Polytechnical Univ. (China)
Jin Chen, Northwestern Polytechnical Univ. (China)


Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

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