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Proceedings Paper

Nitrogen dioxide sensing properties and mechanism of nickel phthalocyanine film
Author(s): Cheng-jun Qiu; Yan-wei Dou; Wei Qu; Yan-mei Sun
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Paper Abstract

Nickel phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based nickel phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the current of nickel phthalocyanine film increase obviously from 3×10-2μA to 1.08μA as the NO2 concentration increases from 0 ppm to 160 ppm. However, the sensitivity of NiPc thin film gas sensor nearly keeps a constant of 0.94 (average) between 10 ppm and 120 ppm with increasing NO2 concentration. The best working temperature of the gas sensor is 50°C for NO2 gas concentrations of 10 ppm, which is much lower than that of general metal oxide gas sensor.

Paper Details

Date Published: 20 October 2009
PDF: 6 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 749366 (20 October 2009); doi: 10.1117/12.840319
Show Author Affiliations
Cheng-jun Qiu, Beijing Institute of Technology (China)
Yan-wei Dou, Heilongjiang Univ. (China)
Wei Qu, Heilongjiang Univ. (China)
Yan-mei Sun, Heilongjiang Univ. (China)


Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

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