Share Email Print

Proceedings Paper

Life-stress relationship for thin film transistor gate line interconnects on flexible substrates
Author(s): Thomas Martin; Aris Christou
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.

Paper Details

Date Published: 23 February 2010
PDF: 9 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760712 (23 February 2010); doi: 10.1117/12.840044
Show Author Affiliations
Thomas Martin, Univ. of Maryland, College Park (United States)
Aris Christou, Univ. of Maryland, College Park (United States)

Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)

© SPIE. Terms of Use
Back to Top