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Proceedings Paper

Pr:YAlO[sub]3[/sub] and Pr:LiYF[sub]4[/sub] laser emission comparison under GaN laser diode pumping
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Paper Abstract

In this paper we report on comparison of laser results reached by Pr-doped oxide and fluoride crystals under GaN-laser diode pumping at room temperature. As oxide and fluoride crystal representatives, Pr:YAlO3 (Pr:YAP) and Pr:LiYF4 (Pr:YLF) crystals were used. Pumping was accomplished by multimode GaN-laser diodes capable of providing output powers of up to 1W at wavelengths corresponding with Pr:YAP and Pr:YLF absorption peaks. For both samples, efficient stimulated emission in the red laser transition has been demonstrated, and laser results regarding the output power, threshold, and slope efficiency with respect to the absorbed power have been compared.

Paper Details

Date Published: 17 February 2010
PDF: 6 pages
Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757828 (17 February 2010); doi: 10.1117/12.840008
Show Author Affiliations
Martin Fibrich, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Karel Nejezchleb, Crytur Ltd. (Czech Republic)
Václav Škoda, Crytur Ltd. (Czech Republic)


Published in SPIE Proceedings Vol. 7578:
Solid State Lasers XIX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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