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Proceedings Paper

Advanced characterization techniques for high power VCSELs
Author(s): Holger Moench; Johannes Baier; Stephan Gronenborn; Johanna Kolb; Michael Miller; Pavel Pekarski; Marcel Schemmann; Adriaan Valster
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Paper Abstract

The performance of high power VCSELs in a specific application depends on the geometrical and thermal design as well as on the quality of the epitaxially grown material. Due to the relatively high heat load in densely packed high power arrays the temperature in the active zone and the DBR mirrors changes significantly with the applied current and the traditional characterization methods become less meaningful than for low power devices. This paper presents a method to measure temperature independent power curves with the help of short pulse techniques and data mapping at different heat sink temperatures. In addition the internal quantum efficiency, the transparency current and the gain coefficient are measured by a novel method which operates the VCSEL material as an edge emitter and applies a cut-back technique. The optical losses in the DBR mirrors are determined using external feedback. In summary all relevant parameters which determine the quality of an epitaxial design are measured independently and can be directly compared with modeling and help to optimize the high power VCSEL performance.

Paper Details

Date Published: 5 February 2010
PDF: 11 pages
Proc. SPIE 7615, Vertical-Cavity Surface-Emitting Lasers XIV, 76150G (5 February 2010); doi: 10.1117/12.839953
Show Author Affiliations
Holger Moench, Philips Research Labs. (Germany)
Johannes Baier, Philips Research Labs. (Germany)
Stephan Gronenborn, Philips Research Labs. (Germany)
Johanna Kolb, Philips Research Labs. (Germany)
Michael Miller, Philips Technologie GmbH U-L-M Photonics (Germany)
Pavel Pekarski, Philips Research Labs. (Germany)
Marcel Schemmann, Philips Research Labs. (Germany)
Adriaan Valster, Philips Lighting B.V. (Netherlands)

Published in SPIE Proceedings Vol. 7615:
Vertical-Cavity Surface-Emitting Lasers XIV
James K. Guenter; Kent D. Choquette, Editor(s)

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