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Proceedings Paper

Microwave irradiation of lead zirconate titanate thin films
Author(s): Z. J. Wang; M. W. Zhu
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Paper Abstract

The effect of microwave irradiation process on crystallization of Pb(ZrxTi1-x)O3 (PZT) films was investigated. The PZT thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field at 500°C for 30 min and 650°C for 60 s, respectively. The crystalline phases, microstructures and electrical properties of the PZT films are investigated. X-ray diffraction analysis indicated that both the films heated by microwave irradiation at 500°C for 30 min and those at 650°C for 60 s were crystallized well into the perovskite phase. However, the PZT films crystallized at 500°C for 30 min had a (100)-preferred orientation while the PZT films crystallized at 650°C for 60 s had a (111)-preferred orientation. The average values of remanent polarization, coercive field, dielectric constant and loss of the PZT films crystallized at 500°C for 30 min are approximately 21 μC/cm2, 90 kV/cm, 510 and 0.07 respectively, whereas the PZT films crystallized at 650°C for 60 s are approximately 27 μC/cm2, 82 kV/cm, 900 and 0.05 respectively. The difference between the electrical properties of the PZT films crystallized by deferent process can be related to the microstructure effect.

Paper Details

Date Published: 21 October 2009
PDF: 6 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74930A (21 October 2009); doi: 10.1117/12.839949
Show Author Affiliations
Z. J. Wang, Institute of Metal Research (China)
M. W. Zhu, Institute of Metal Research (China)


Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

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