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Proceedings Paper

975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications
Author(s): P. Crump; C. M. Schultz; A. Pietrzak; S. Knigge; O. Brox; A. Maaßdorf; F. Bugge; H. Wenzel; G. Erbert
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Paper Abstract

Many pumping and direct diode applications of high power diode lasers require sources that operate within a narrow (< 1nm) temperature stable spectral line. The natural linewidth of high power broad area lasers is too wide (4-5nm) and varies too quickly with temperature (0.3-0.4nm/K) for such applications. The spectrum can be narrowed by introducing gratings within the diode laser itself or by the use of an external stabilization via a Volume Bragg Grating, VBG. For optimal loss-free, low cost wavelength stabilization with a VBG, the narrowest possible far field angles are preferred, provided power and efficiency are not compromised. Devices that contain internal gratings are potentially the lowest manufacturing cost option, provided performance remains acceptable, as no external optics are required. Therefore, in order to address the need for high power with narrow linewidth, three different diode laser device designs have been developed and are discussed here. For VBG use, two options are compared: (1) devices with high conversion efficiency (68% peak) and reasonable far field (45° with 95% power content) and (2) devices with extremely small vertical far field angle (30° with 95% power content) and reasonable conversion efficiency (59% peak). Thirdly, the latest performance results from broad area devices with internal distributed feedback gratings (DFB-BA Lasers) are also presented, constructed here using buried overgrowth technology. DFB-BA lasers achieve peak conversion efficiency of 58% and operate with < 1nm linewidth operation to over 10W continuous wave at 25°C. As a result, the system developer can now select from a range of high performance diode laser designs depending on the requirements.

Paper Details

Date Published: 17 February 2010
PDF: 10 pages
Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830N (17 February 2010); doi: 10.1117/12.839570
Show Author Affiliations
P. Crump, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
C. M. Schultz, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
A. Pietrzak, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
S. Knigge, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
O. Brox, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
A. Maaßdorf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
F. Bugge, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
H. Wenzel, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)

Published in SPIE Proceedings Vol. 7583:
High-Power Diode Laser Technology and Applications VIII
Mark S. Zediker, Editor(s)

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