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Proceedings Paper

Characterizing the 65nm through-pitch sensitivity to scanner parameters by CD SEM and scatterometry metrologies
Author(s): Jason Shieh; Alek Chen
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Paper Abstract

Processes of 65nm node are applied on a scanner (TWINSCAN XT1700i) for this experiment. The five adjustable scanner parameters investigated are dose, focus scan range, NA, σ_width, and σ_center of the illumination pupil. The test reticle contains a range of pitches, each with a variety of biases sufficient for selecting the target CD at each pitch. It can be used for exposing patterns for both CD SEM and scatterometry. The minimum and maximum pitches of the 1D line/space pattern are 135 and 500nm, respectively, and no assist feature is added for the isolated pitches. Seventeen pitches are selected for generating the through-pitch curve, and they are the most sensitive ones to this illumination setting. Two metrology tools are used to measure the printed features, i.e. CD SEM and scatterometry. MCD (Middle CD) measured by scatterometry is compared with CD SEM data for the OPE curve. A very consistent offset between two metrologies is presented through the pitches; the R2 value is greater than 0.98 for point to point of CD SEM versus MCD correlation. In addition to the CD measurements, scatterometry provides SWA information, which is verified to correlate linearly with focus variations. Based on the metrology data, results of this study demonstrate that the OCD data are as reliable as the CD SEM measurements.

Paper Details

Date Published: 12 December 2009
PDF: 8 pages
Proc. SPIE 7520, Lithography Asia 2009, 752024 (12 December 2009); doi: 10.1117/12.839562
Show Author Affiliations
Jason Shieh, ASML Taiwan Ltd. (Taiwan)
Alek Chen, ASML Taiwan Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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