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Proceedings Paper

Ultrafast terahertz response of optically excited semiconductor heterostructures
Author(s): D. Golde; M. Kira; S. W. Koch
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Paper Abstract

A microscopic theory for the terahertz response of a semiconductor quantum well under coherent conditions is presented. It is shown that excitonic effects influence the intersubband absorption under certain conditions. For high-quality samples, one should be able to resolve both band-to-band and excitonic intersubband transitions in an terahertz absorption measurement. Due to the competition of intersubband transitions and classical field-induced carrier accelerations, an unexpected Fano feature is observed in the terahertz spectra. This result is in excellent agreement with recent measurements.

Paper Details

Date Published: 16 February 2010
PDF: 10 pages
Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76000F (16 February 2010); doi: 10.1117/12.839460
Show Author Affiliations
D. Golde, Philipps-Univ. Marburg (Germany)
M. Kira, Philipps-Univ. Marburg (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 7600:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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